Abstract:
In this numerical simulation research, we have investigated device performances of p-i-n type
organometal trihalide perovskite solar cell by introducing deep and shallow defects in the bulk halide
perovskite layer. The organometal halide perovskite solar cell device structure has
Glass/ITO/PEDOT:PSS/Bulk-MAPI/2D-MAPI/PCBM/Ag. The open-circuit voltage of the solar cell
was decreased due to both shallow and deep defects of the bulk-MAPI layer which increase the
recombination of electron-hole pairs in the solar cell. The dark saturation current, which causes to
reduce the open-circuit voltage of the solar cell, was increased due to the deep defects in the bulkMAPI layer. Therefore, the power conversion efficiency of the solar cell can be enhanced by
minimizing the deep defects in the bulk-MAPI layer, which can increase the open-circuit voltage of
the solar cell by suppressing the effect of dark saturation current. We have verified that ShockleyRead-Hall (SRH) recombination is the most predominant recombination mechanism when only the
deep defects are presented in the bulk-MAPI layer. Also, this investigation has proved, that Radiative
recombination has become the most predominant recombination mechanism when the shallow defects
are presented in the bulk-MAPI layer by completely omitting the deep defects of the bulk-MAPI layer.
Finally, our model verified that the dark saturation current of the solar cell controls the open-circuit
voltage when the recombination is occurring in the solar cell. Iodine interstitial defects that mainly
act as deep defects in the bulk-MAPI layer should be minimized to increase the overall solar cell
performance and power conversion efficiency of the organometal trihalide perovskite solar cell
device
