dc.contributor.author | Jayaweera, P.V.V. | |
dc.contributor.author | Pitigala, P.K.D.D.P. | |
dc.contributor.author | Shao, J.F. | |
dc.contributor.author | Tennakone, K. | |
dc.contributor.author | Perera, A.G.U. | |
dc.contributor.author | Jayaweera, P.M. | |
dc.contributor.author | Baltrusaitis, J. | |
dc.date.accessioned | 2013-12-23T04:38:27Z | |
dc.date.available | 2013-12-23T04:38:27Z | |
dc.date.issued | 2013-12-23T04:38:27Z | |
dc.identifier.citation | Jayaweera, P.V.V., Pitigala, P.K.D.D.P., Shao, J.F., Tennakone, K., Perera, A.G.U., Jayaweera, P.M., & Baltrusaitis, J. (2013). Low - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dots. IEEE Transactions on Electron Devices, 57(10), 2756-2760. | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | http://dr.lib.sjp.ac.lk/handle/123456789/1358 | |
dc.description.abstract | A low-cost photoconductive dual-band detector based on a ZnO film sensitized with lead sulfide quantum dots (PbS-QDs) is reported. The UV response arises from the interband absorption of UV radiation by ZnO, and the IR response is due to the absorption in the PbS-QDs. The detector exhibits UV response from 200 to 400 nm with a peak responsivity of 4.0 × 105 V/W and detectivityD∗ of 5.5 × 1011 Jones at 370 nm at room temperature. The observed visible–near IR response is from 500 to 1400 nm with a responsivity of 5.4 × 105 V/W and D∗ of 7.3 × 1011 Jones at 700 nm operating at room temperature. By increasing the PbS-QD size, the IR response can extend up to 2.9 μm. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE Electron Devices Society | |
dc.subject | Dual band | en_US |
dc.subject | lead sulfide quantum dots (PbS-QDs) | en_US |
dc.subject | low cost | en_US |
dc.subject | ultraviolet–infrared (UV–IR) | en_US |
dc.subject | ZnO | en_US |
dc.title | Low - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dots | en_US |
dc.type | Article | en_US |
dc.date.published | 2010-10 |