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Low - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dots

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dc.contributor.author Jayaweera, P.V.V.
dc.contributor.author Pitigala, P.K.D.D.P.
dc.contributor.author Shao, J.F.
dc.contributor.author Tennakone, K.
dc.contributor.author Perera, A.G.U.
dc.contributor.author Jayaweera, P.M.
dc.contributor.author Baltrusaitis, J.
dc.date.accessioned 2013-12-23T04:38:27Z
dc.date.available 2013-12-23T04:38:27Z
dc.date.issued 2013-12-23T04:38:27Z
dc.identifier.citation Jayaweera, P.V.V., Pitigala, P.K.D.D.P., Shao, J.F., Tennakone, K., Perera, A.G.U., Jayaweera, P.M., & Baltrusaitis, J. (2013). Low - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dots. IEEE Transactions on Electron Devices, 57(10), 2756-2760.
dc.identifier.issn 0018-9383
dc.identifier.uri http://dr.lib.sjp.ac.lk/handle/123456789/1358
dc.description.abstract A low-cost photoconductive dual-band detector based on a ZnO film sensitized with lead sulfide quantum dots (PbS-QDs) is reported. The UV response arises from the interband absorption of UV radiation by ZnO, and the IR response is due to the absorption in the PbS-QDs. The detector exhibits UV response from 200 to 400 nm with a peak responsivity of 4.0 × 105 V/W and detectivityD∗ of 5.5 × 1011 Jones at 370 nm at room temperature. The observed visible–near IR response is from 500 to 1400 nm with a responsivity of 5.4 × 105 V/W and D∗ of 7.3 × 1011 Jones at 700 nm operating at room temperature. By increasing the PbS-QD size, the IR response can extend up to 2.9 μm. en_US
dc.language.iso en en_US
dc.publisher IEEE Electron Devices Society
dc.subject Dual band en_US
dc.subject lead sulfide quantum dots (PbS-QDs) en_US
dc.subject low cost en_US
dc.subject ultraviolet–infrared (UV–IR) en_US
dc.subject ZnO en_US
dc.title Low - Cost ZnO - Based Ultraviolet-Infrared Dual-Band Detector Sensitized With PbS Quantum Dots en_US
dc.type Article en_US
dc.date.published 2010-10


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